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| !"#$ # #%&' ( $$ ) * + * , ( "((-"#-./ , , * 010 ) + " 2 . 3* # * ! "#$ ! ! ! "#$ %$ &! ' ! ! ( %$ )! * * #$ * ) + , ! )! * * + - . $/0 %1#$ # * )! 2!- ! !! & $34 - )0 " #$ & ! /5 $34 - )0 " %% 6 + , ! 2!- ! !! 2 $34 - )0 7"! ) % , ) 0 (% 8$ ) + , ! )! +-! + + - . %$ 0 ( 66$ 9 :! . ! ! 2!- ! * * 2 2 60 + ! /$/ * )! !! * * 0 + ! // ' ( % 340 * %$* /%$ 2 .! ( ( /% 19 ( ( & ! / forward voltage 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1 10 DE3S4M tc=150 c [max] tc=25 c [max] pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a] reverse current 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 DE3S4M tc=150 c [max] tc=150 c [typ] pulse measurement per diode tc=125 c [typ] tc=100 c [typ] tc=75 c [typ] reverse voltage v r [v] reverse current i r [ma] 0 1 2 3 4 5 6 0 10 20 30 40 50 DE3S4M 0.3 reverse power dissipation tj = 150 c sin 0.2 0.5 d=0.05 dc 0.1 0.8 reverse voltage v r [v] reverse power dissipation p r [w] 0 t p v r t d=t p /t 0 t p i o t d=t p /t 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 DE3S4M 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 DE3S4M 0.3 derating curve v r = 20v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r case temperature tc [ c] average rectified forward current i o [a] 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 DE3S4M v r = 20v alumina substrate derating curve i o [a] average rectified forward current ta [c] ambient temperature 0 t p i o t d=t p /t 0 v r soldering land (leads) 1.5mm x 2.5mm soldering land (heatsink) 7mm x 7mm conductor layer 20um substrate thickness 0.64mm peak surge forward capability 0 20 40 60 80 100 1 10 100 DE3S4M 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=125 c before surge current is applied t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp 0 20 40 60 80 100 120 0 50 100 150 sbd repetitive surge reverse power derating curve junction temperature tj [ c] p rrsm derating [%] 0.1 1 10 1 10 100 sbd repetitive surge reverse power capability pulse width t p [ m s] p rrsm (t p ) / p rrsm (t p =10 m s) ratio t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp |
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